Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)
نویسندگان
چکیده
A resistive switching memory fabricated by using an in situ current-induced oxidization process on a single crystal metallic nanowire is demonstrated Yu-Lun Chueh and co-workers article number 2000252. single-crystal Cu (NW) found to be the best material with stable behaviors including reversible up 100 cycles large ON/OFF ratio of >103 low voltages <0.5.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2021
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202170015